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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB1230 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Fig.1 simplified outline (TO-3PN) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -110 -100 -6 -15 -25 -5 UNIT V V V A A A Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 3.0 W 100 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1230 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA;RBE= -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.8 V VBE sat Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 |I A IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain Q VEB=-5V; IC=0 -100 |I A IC=-1.5A ; VCE=-2V 50 DC current gain hFE-1 Classifications P 50-100 HAN INC 70-140 SEM GE IC=-6A ; VCE=-2V OND IC 20 TOR UC 140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1230 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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